Work-Function Dependence of Negative-Ion Production during Sputtering
- 27 February 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 40 (9), 574-577
- https://doi.org/10.1103/physrevlett.40.574
Abstract
A systematic study was made of negative-ion formation by sputtering from a Mo(100) surface with and without adsorbate layers. Correlation with the work-function change when the surface electronic state was modified by a Cs overlayer reveals a possible tunneling mechanism. Tunnel barrier widths and heights were estimated for , , , and from the experimental data.
This publication has 8 references indexed in Scilit:
- Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometryApplied Physics Letters, 1977
- Mechanism for negative-ion production in the surface-plasma negative-hydrogen-ion sourceJournal of Applied Physics, 1976
- The use of secondary ion mass spectrometry in surface analysisSurface Science, 1975
- Electron-Stimulated Desorption as a Tool for Studies of Chemisorption: A ReviewJournal of Vacuum Science and Technology, 1971
- Progress in analytic methods for the ion microprobe mass analyzerInternational Journal of Mass Spectrometry and Ion Physics, 1969
- Contact-potential measurements of the adsorption of Cs, O2 and H2 on (110) TaSurface Science, 1967
- On the excited state of sputtered particlesNuclear Instruments and Methods, 1965
- Theory of Auger Ejection of Electrons from Metals by IonsPhysical Review B, 1954