Hydrogen-sensitive palladium gate MOS capacitors
- 1 June 1976
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (6), 2537-2538
- https://doi.org/10.1063/1.322971
Abstract
The C‐V characteristics of palladium gate MOS capacitors change significantly when exposed to an air ambient containing up to 4% hydrogen. From these experiments, it is concluded that these changes are due to the lowering of the palladium work function (by as much as 1 V) brought on by the formation of palladium hydride. Mobile charges in the oxide do not contribute to the observed C‐V shifts brought about by exposure to hydrogen.Keywords
This publication has 4 references indexed in Scilit:
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- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975
- Hydrogen adsorption and absorption on evaporated palladium films: Study by surface potential measurementsSurface Science, 1974
- Photo-electric measurement of the work function of metals and its alteration after gas adsorptionVacuum, 1963