Γ-X-Γ electron transfer in mixed type I-type II GaAs/AlAs quantum well structures
- 31 July 1992
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 83 (3), 245-248
- https://doi.org/10.1016/0038-1098(92)90846-2
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Low-power, all-optical nonlinear absorption in asymmetric double quantum wellsApplied Physics Letters, 1991
- cw and femtosecond optical nonlinearities of type-II quantum wellsPhysical Review Letters, 1991
- Experimental study of the Γ-Xelectron transfer in type-II (Al,Ga)As/AlAs superlattices and multiple-quantum-well structuresPhysical Review B, 1990
- Dynamical Optical Nonlinearities Induced by Interlayer Carrier Transfer in Type-II AlxGa1-xAs/AlAs Multiple-Quantum-Well StructuresJournal of the Physics Society Japan, 1990
- Carrier dynamics in (GaAs)m(AlAs)n superlatticesSuperlattices and Microstructures, 1989
- InterlayerΓ-Xscattering in staggered-alignmentAs-AlAs ternary alloy multiple-quantum-well structuresPhysical Review B, 1989
- Order of theXconduction-band valleys in type-II GaAs/AlAs quantum wellsPhysical Review B, 1989
- Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structuresApplied Physics Letters, 1989
- Subpicosecond real-space charge transfer in type-II GaAs/AlAs superlatticesPhysical Review Letters, 1989
- Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopyPhysical Review Letters, 1987