The resistivity, temperature coefficient of resistance (TCR), and structure of annealed films deposited by de diode sputtering have been studied as a function of chromium content over the range 17–33 at.% Cr. The resistivity decreases from 0.1 to 0.001 Ω cm and the TCR changes from −1500 to +500 ppm/°C with increasing Cr content. Films containing about 27 at.% Cr had the lowest TCR. Films deposited at a cathode potential of 10 kV have a more positive TCR for the same resistivity than films sputtered at 2.5 kV. Electron micrographs showed the latter films to have a coarser structure—due either to a larger grain size (150 Ă compared to 50 Å) or to a clumping of grains. Electron diffraction patterns indicated a nearly amorphous film; CrSi2 was the only identifiable phase. The average drift of 50 μm-wide resistors (1 to 25 kΩ/square) during 1800 h at 200 °C (no load) or 125 °C (50 V dc) was ±0.5% after an initial 200 h aging under the same conditions.