Carrier dynamics in quantum wells behaving as giant traps
- 1 November 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (9), 3845-3847
- https://doi.org/10.1063/1.339226
Abstract
An Arrhenius-type of expression is derived for the emission rate of electrons from a quantum well on the basis of detailed balance principles. The formulation is applied to a 150-Å In0.2Ga0.8As/Al0.16Ga0.84As strained single quantum well grown by molecular beam epitaxy. From an analysis of the data it is possible to estimate the conduction band offset ΔEc, which may be extremely useful for strained systems.Keywords
This publication has 7 references indexed in Scilit:
- Electron traps in AlGaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Lattice mismatch and band offsets in strained layersJournal of Applied Physics, 1986
- Deep levels in as-grown and Si-implanted In0.2Ga0.8As–GaAs strained-layer superlattice optical guiding structuresJournal of Applied Physics, 1986
- A detailed investigation of the D-X center and other trap levels in GaAs-AlxGa1-xAs modulation-doped heterostructures grown by molecular-beam epitaxyIEEE Transactions on Electron Devices, 1986
- Transient capacitance spectroscopy on large quantum well heterostructuresJournal of Applied Physics, 1983
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974