Dielectric Properties of Y2O3 Thin Films Prepared by Vacuum Evaporation

Abstract

The dielectric films formed by evaporating Y₂O₃ in vacuum have been identified with sesquioxide by infrared transmission, electron and X-ray diffraction studies. Thin film capacitors using this dielectric material exhibit excellent electric stability in high termperature and can be reproduced easily in a closed-cycle process with electron beam equipment. The dielectric constant is 13 and dissipation factor, tan δ, is 0.003 at room temperature with a breakdown field strength of 3×10⁶ V/cm. The temperature coefficient of Y₂O₃ film capacitor is about 300 ppm/°C.