Growth and dissolution kinetics of III-V heterostructures formed by LPE
- 1 August 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (8), 5322-5330
- https://doi.org/10.1063/1.326630
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- An isothermal etchback-regrowth method for high-efficiency Ga1−xAlxAs-GaAs solar cellsApplied Physics Letters, 1977
- Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definitionApplied Physics Letters, 1977
- Channeled substrate buried heterostructure GaAs- (GaAl)As injection lasersJournal of Applied Physics, 1976
- The application of heterojunction structures to optical devicesJournal of Electronic Materials, 1975
- The application of numerical methods to simulate the liquid phase epitaxial growth of Ga1 −xAlxAs from an unstirred solutionJournal of Crystal Growth, 1972
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972
- The initial transient in melting and solidification experimentsJournal of Crystal Growth, 1971
- Thermal Expansion of AlAsJournal of Applied Physics, 1970
- The stability of a planar interface during the melting of a binary alloyPhilosophical Magazine, 1968
- A generalized Gibbsian surfaceSurface Science, 1966