High power 0.98 μm InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers

Abstract

Data are presented on device results from InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers entirely grown by a three step MOVPE process showing a laser threshold of 2.9 mA and a maximum monomode output power of 58 mW, both measured CW at RT. The monomode oscillation is obtained even for an injection current of 150 mA (21 times the laser threshold) with a sidemode suppression ratio of 35 dB and the Bragg wavelength at 0.98 μm and this is, to the best of the authors' knowledge, the highest CW monomode output power ever obtained from GaAs-based DFB lasers.