Vapor Deposition and Etching Open Tube Kinetics under Diffusion Controlled Conditions

Abstract

A quantitative method for treating chemical deposition and etching open tube processes is described. The method is based on the gas dynamic theory of boundary layer and on the similarity of mass‐ and heat‐transfer phenomena. For the conditions , the equation for the rate of the process is This equation is applied for the calculation of the rate of Ge and Si crystals deposition and etching. A good agreement of calculated and experimental values is obtained.