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MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
Home
Publications
MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
SK
S. Keller
S. Keller
FC
F. Cabané
F. Cabané
MM
M.S. Minsky
M.S. Minsky
XW
Xing Hui Wu
Xing Hui Wu
MM
M.P. Mack
M.P. Mack
JS
James S. Speck
James S. Speck
EH
E. Hu
E. Hu
LC
L.A. Coldren
L.A. Coldren
UM
Umesh K. Mishra
Umesh K. Mishra
Steven P. DenBaars
Steven P. DenBaars
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1 February 1998
journal article
Published by
Trans Tech Publications, Ltd.
in
Materials Science Forum
Vol. 264-268
,
1157-1160
https://doi.org/10.4028/www.scientific.net/msf.264-268.1157
Abstract
No abstract available
Keywords
DOPING
GALLIUM NITRIDE (GAN)
INGAN
MULTI-QUANTUM WELLS
PHOTOLUMINESCENCE (PL)
Cited by 21 articles