Optimum Second-Harmonic Generation in Nondegenerate Semiconductors using dc Electric Fields
- 1 February 1969
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (2), 793-797
- https://doi.org/10.1063/1.1657465
Abstract
In this paper the author has analytically investigated the use of dc electric fields of arbitrary strength, for the generation of second harmonics of high-frequency electromagnetic waves in a nondegenerate semiconductor. Boltzmann equation techniques have been employed to describe the motion of free carriers inside the semiconductor; the only form of carrier scattering considered is acoustic phonon scattering. The curve of second-harmonic intensity vs dc field exhibits a maximum, thus illustrating that there is an optimum value of the dc field for which the generation can be most efficient.Keywords
This publication has 9 references indexed in Scilit:
- Microwave third harmonic generation in semiconductors at low temperaturesProceedings of the Physical Society, 1967
- On Nonlinear Generation of Second Harmonic and Sum and Difference Frequencies in a Homogeneous PlasmaJournal of the Physics Society Japan, 1966
- Non-linear generation of combination frequencies in a plasmaProceedings of the Physical Society, 1966
- Optical Nonlinearities of a PlasmaPhysical Review B, 1966
- Harmonic Generation in a Microwave DischargePhysics of Fluids, 1965
- Frequency Conversion in a Microwave DischargeProceedings of the IRE, 1961
- NONLINEAR PHENOMENA IN A PLASMA LOCATED IN AN ALTERNATING ELECTROMAGNETIC FIELDSoviet Physics Uspekhi, 1960
- On the Conductivity of Non-polar Crystals in the Strong Electric Field, IProgress of Theoretical Physics, 1954
- Hot Electrons in Germanium and Ohm's LawBell System Technical Journal, 1951