Limited reaction processing: Silicon epitaxy
- 1 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (7), 721-723
- https://doi.org/10.1063/1.96015
Abstract
We introduce a new technique, limited reaction processing, in which radiant heating is used to provide rapid, precise changes in the temperature of a substrate to control surface reactions. This process was used to fabricate thin layers of high quality epitaxial silicon. Abrupt transitions in doping concentration at the epitaxial layer/substrate interface were achieved for undoped films deposited on heavily doped substrates.Keywords
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