High-average-power (>20-W) Nd:YVO_4 lasers mode locked by strain-compensated saturable Bragg reflectors
- 1 June 2000
- journal article
- Published by Optica Publishing Group in Journal of the Optical Society of America B
- Vol. 17 (6), 919-926
- https://doi.org/10.1364/josab.17.000919
Abstract
Strain-compensated double InGaAs quantum-well saturable Bragg reflectors (SBR’s) with high damage thresholds have been developed for use as mode-locking elements in high-average-power neodymium lasers. lasers have been developed with these new SBR’s, which produce transform-limited pulses of 21-ps duration at 90 MHz and an average power of 20 W in a diffraction-limited output beam. The peak pulse power at an output power of 20 W was 10.6 kW. A comparison of the operating parameters of strained single and strain-compensated double-well SBR’s indicates that the damage threshold increased by a factor of at least 2–3. Long cavity laser variants were investigated to assess the limitations of further power scaling. At a repetition frequency of 36-MHz stable mode-locked pulses with peak pulse powers of 24.4 kW and pulse energies of 0.6 µJ could be generated.
Keywords
This publication has 14 references indexed in Scilit:
- Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamicsApplied Physics Letters, 1999
- Semiconductor saturable absorber mirrors (SESAM's) for femtosecond to nanosecond pulse generation in solid-state lasersIEEE Journal of Selected Topics in Quantum Electronics, 1996
- Mode-locking ultrafast solid-state lasers with saturable Bragg reflectorsIEEE Journal of Selected Topics in Quantum Electronics, 1996
- Synchronously pumped optical parametric oscillators with LiB_3O_5Journal of the Optical Society of America B, 1995
- Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry–Perot saturable absorberOptics Letters, 1992
- Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasersIEEE Journal of Quantum Electronics, 1991
- Multielement stable resonators containing a variable lensJournal of the Optical Society of America A, 1987
- Resonators for solid-state lasers with large-volume fundamental mode and high alignment stabilityApplied Optics, 1986
- Room-temperature operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976