Iron doped bulk semi-insulating GaAs

Abstract

As an acceptor dopant with a solid:liquid distribution coefficient k_sN_Fe is in the mid‐10¹⁵ cm⁻³ range) are reported for crystals grown by both the liquid encapsulated Czochralski and the vertical gradient freeze methods. Except in the very tail region of such crystals (when N_Fe≳N_EL2 and high resistivity p‐type behavior results), GaAs with this modest iron modification to the compensation balance behaves with quite ordinary semi‐insulating properties. The iron acceptors are then all ionized, and are optically ‘‘invisible.’’