Plasma spread in high-power thyristors under dynamic and static conditions
- 1 September 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 17 (9), 680-687
- https://doi.org/10.1109/t-ed.1970.17057
Abstract
The plasma spread properties of various thyristors were studied utilizing an infrared viewing technique. The plasma velocity occurring prior to equilibrium, and plasma spread conditions at equilibrium were determined. Velocity versus current density diagrams were generated for low-frequency, high-voltage and high-frequency, low-voltage devices. Effect of the initial turned-on line on plasma spreading is discussed.Keywords
This publication has 3 references indexed in Scilit:
- Probed determination of turn-on spread of large area thyristorsIEEE Transactions on Electron Devices, 1966
- The gate-triggered turn-on process in thyristorsSolid-State Electronics, 1965
- Gated turn-on of four layer switchIEEE Transactions on Electron Devices, 1963