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Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine
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Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine
Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine
S. A. Nikishin
S. A. Nikishin
VA
V. G. Antipov
V. G. Antipov
SR
S. S. Ruvimov
S. S. Ruvimov
GS
G. A. Seryogin
G. A. Seryogin
HT
H. Temkin
H. Temkin
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18 November 1996
journal article
Published by
AIP Publishing
in
Applied Physics Letters
Vol. 69
(21)
,
3227-3229
https://doi.org/10.1063/1.118018
Abstract
No abstract available
Keywords
GALLIUM ARSENIDE
THREE DIMENSIONAL
MOLECULAR BEAM EPITAXY
SURFACE STRUCTURE
Cited by 14 articles