Rapid thermal annealing of YBaCuO films on Si and SiO2 substrates
- 11 July 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (2), 153-155
- https://doi.org/10.1063/1.100578
Abstract
A very rapid thermal annealing technique has been employed on sputter‐deposited YBaCuO films. After an O2 anneal (with or without a N2 preanneal) at temperatures as high as 920 °C for 8–12 s, films on (100)Si and on SiO2 /Si substrates exhibited superconductivity onsets above 95 K and zero resistance in the range 40–66 K.Keywords
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