Defect states in electron bombarded n-InP

Abstract

A deep level transient spectroscopy study has been made of 1‐MeV electron bombarded liquid encapsulated Czochralski grown n‐InP Schottky barrier structures. Two previously unobserved shallow defect states were found at very low concentration levels in the unirradiated material, and irradiation resulted in seven new states in the upper‐half of the band gap. Introduction rates, electron activation energies, and capture cross sections were examined and a preliminary investigation of annealing behavior was performed. The irradiation induced states all exhibited relatively low introduction rates and large capture cross sections, and three gave evidence of significant defect mobility near room temperature.