Transport properties of multilayered Cr/SiOx thin films

Abstract

A series of multilayered Cr/SiO_x thin films with 1.8<x2 target in an alternating fashion. The film thicknesses were nominally 600 Å made up by six Cr and six SiO_x layers with a nominal period of 100 Å. The films were analyzed using x‐ray diffraction and Auger spectroscopy. The sheet resistance of the films was measured between 8–330 K and showed that films with more than 50% metal had positive temperature coefficient of resistance (TCR) and those with less than 50% had negative TCRs. The films with more than 50% metal showed a minimum in the resistance in the range of 30–70 K which we associate with localization effects and also a maximum in the resistance around 270 K which we tentatively attribute to their multilayered structure.