Control of threshold voltage of organic field-effect transistors with double-gate structures

Abstract

We fabricated pentacene field-effect transistors with planar-type double-gate structures, where the top- and bottom-gate electrodes can independently apply voltage biases to channel layers. The threshold voltage of organic transistors is changed systematically in a wide range from $-16\text{to}-43\mathrm{V}$ when the voltage bias of the top-gate electrode is changed from $0\text{to}+60\mathrm{V}$ . The mobility in the linear regime is almost constant $(0.2{\mathrm{cm}}^2∕\mathrm{V}\mathrm{s})$ at various voltage biases of the top-gate electrode and the on/off ratio is ${10}^6$ .