Oscillation Frequencies of Protons in Planar Channels of Silicon

Abstract

Measurements of the angular distributions and energy losses of 0.4-MeV protons transmitted through planar channels in thin silicon crystals have been used to relate the stopping power of the ions to the frequencies with which they oscillate in traversing the channels. In agreement with analogous experiments for several ions in gold, the stopping power is found to be accurately proportional to the channel oscillation frequency. The interaction between the proton and the silicon atoms is in reasonable agreement with expectations based on a Thomas-Fermi model.