Electrical properties of clean silicon surfaces with different crystalline orientations
- 31 December 1969
- journal article
- Published by Elsevier in Surface Science
- Vol. 18 (2), 239-244
- https://doi.org/10.1016/0039-6028(69)90168-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Experimental study of the origin of surface states on clean surfacesSurface Science, 1968
- The influence of the adsorption of Au, Sb and O2 on the electrical properties of the atomically clean silicon surfaceSurface Science, 1968
- Surface states of a deformed one-dimensional crystalPhysica, 1966
- Surface reactions of silicon with aluminum and with indiumSurface Science, 1964
- Possible structures for clean, annealed surfaces of germanium and siliconSurface Science, 1964
- Comparison of the Photoelectric Properties of Cleaved, Heated, and Sputtered Silicon SurfacesJournal of Applied Physics, 1964
- Cross sections of midgap surface states in silicon by pulsed field effect experimentJournal of Physics and Chemistry of Solids, 1960