Abstract
We present four-point probe measurements of the in-plane electrical conductivities of electron beam-evaporated gold layers of thickness 20 nm to 2 μm deposited on Si(100), Si(111), and BK7 glass substrates. The values of thermal conductivities deduced from these measurements of gold films on glass samples agree well with prediction from the surface and grain-boundary scattering model, but not for gold films on silicon samples. Thermal conductivities of gold films are found to be different for samples on hydrofluoric acid etched Si(100) and Si(111) substrates, for which surface roughness and microstructures of the gold films have been examined to understand the difference in these thermal conductivity results.