Dynamic characterisation of Si/SiGe power HBTs

Abstract

Si/SiGe power heterojunction bipolar transistors (HBTs) grown by MBE were dynamically characterised in the common-base configuration. At an emitter current density of 1.1 × 10⁵ A/cm², a maximum frequency of oscillation of 49 GHz was observed. At 10 GHz a maximum unilateral gain of 14 dB is available, and a CW output power of 1.3 W/mm for a device with 10 parallel emitter-fingers of 1×10 µm² each was predicted, from CW measurements.