Effects of KrF laser irradiation on Bi nanoclusters embedded in a-SiO2 by ion implantation
- 2 November 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (18), 2687-2689
- https://doi.org/10.1063/1.122554
Abstract
Bismuth nanoclusters have been formed in optical grade silica glass (Corning 7940) by ion implantation which formed localized Bi:SiO2 composite in the near-surface region. Subsequent irradiation with 248 nm KrF excimer laser light modifies the distribution and chemical states of the implanted bismuth in the composite. Excimer laser irradiation causes not only photochemical reactions in the composite leaving a thin film of bismuth oxide on the surface, but also removal of the precipitated particles by both thermal and nonthermal desorption mechanisms from the surface.Keywords
This publication has 9 references indexed in Scilit:
- Interaction of intense laser pulses with atomic clustersPhysical Review A, 1996
- New Spectroscopic Tool for Cluster Science: Nonexponential Laser Fluence Dependence of PhotofragmentationPhysical Review Letters, 1996
- Optical absorption by colloidal precipitates in bismuth-implanted fused silica: Annealing behaviorJournal of Applied Physics, 1995
- Laser irradiation effects in Si+-implanted SiO2Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Optical Bleaching of Bismuth Implanted Silica Glass: A Threshold EffectMRS Proceedings, 1992
- Laser-induced bleaching of quartz glass in the ultraviolet rangeSoviet Journal of Quantum Electronics, 1990
- Bleaching of peroxy radical in SiO2 glass with 5 eV lightJournal of Non-Crystalline Solids, 1990
- Laser-induced reemission of silicon atoms implanted into quartzJournal of Applied Physics, 1988
- Desorption stimulated by laser-induced surface-plasmon excitationPhysical Review Letters, 1988