Ku-band high efficiency high gain pseudomorphic HEMT

1 January 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (3), 270-271
https://doi.org/10.1049/el:19910172

Abstract

A 0.25μm gate length, 1600μm gate width, doubleheterojunction pseudomorphic HEMT with moderate output power and record power gain and efficiency is reported. At 15 GHz, output power is 575 mW with 12dB gain and 50% power-added efficiency.

Keywords

15 GHZ
50 PERCENT
POWER-ADDED EFFICIENCY
SHF
HIGH GAIN
12 DB
575 MW
HIGH FREQUENCY
1600 MICRON
0.25 MICRON
MICROWAVE TRANSITION
PSEUDOMORPHIC HEMT
DOUBLE-HETEROJUNCTION
KU-BAND
SUBMICRON GATE
POWER GAIN
GATE WIDTH
GATE LENGTH

Cited by 18 articles