High-order resonant Raman scattering by combinations and overtones of interface phonons in GaAs-AlAs short-period superlattices
- 15 February 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (5), 2517-2520
- https://doi.org/10.1103/physrevb.35.2517
Abstract
We report the observation of high-order Raman scattering at the resonance with the lowest direct optical transition of GaAs-AlAs short-period superlattices. While the one-phonon spectrum involves both confined and interface modes of GaAs and of AlAs, the high-order scattering is dominated by combinations and overtones of a GaAs-like and an AlAs-like phonon of a new type, which appear to be interface modes with large in-plane wave vectors.Keywords
This publication has 12 references indexed in Scilit:
- X-point excitons in AlAs/GaAs superlatticesApplied Physics Letters, 1986
- Phonons in semiconductor superlatticesIEEE Journal of Quantum Electronics, 1986
- Observation of Long-Wavelength Interface Phonons in a GaAs/AlGaAs SuperlatticePhysical Review Letters, 1986
- Interface Vibrational Modes in GaAs-AlAs SuperlatticesPhysical Review Letters, 1985
- Optical phonon quantum levels in GaAs/Ga1−xAlxAs supelatticesSuperlattices and Microstructures, 1985
- Collective excitations of semi-infinite superlattice structures: Surface plasmons, bulk plasmons, and the electron-energy-loss spectrumPhysical Review B, 1984
- Lattice dynamics of thin ionic slabs. III. Application to GaAs slabsPhysical Review B, 1983
- Raman scattering in superlattices: Anisotropy of polar phononsApplied Physics Letters, 1980
- Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAsPhysical Review B, 1978
- Surface Modes of Vibration and Optical Properties of an Ionic - Crystal SlabPhysical Review B, 1971