Single-Injection Measurements in n-Type Silicon at 4.2°K under Transient Conditions
- 1 December 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (12), 3943-3945
- https://doi.org/10.1063/1.1713977
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- SURFACE EFFECTS ON n-TYPE SILICON IN CONTACT WITH LIQUID-HELIUMApplied Physics Letters, 1965
- Experimental Investigations of Single Injection in Compensated Silicon at Low TemperaturesPhysical Review B, 1964
- Simplified Theory of Space-Charge-Limited Currents in an Insulator with TrapsPhysical Review B, 1956