Te-related resonant DX centres in AlxGa1-xAs alloys under hydrostatic pressure
- 1 June 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (6), 522-526
- https://doi.org/10.1088/0268-1242/6/6/021
Abstract
MOVPE-grown, Te-doped AlxGa1-xAs samples (doping level (2-7)*1018 cm-3), with 00.21Ga0.79As with 2*1018 cm-3 Te, DX levels lie 70 meV above the bottom of the Gamma band. From the pressure dependence of the room-temperature photoluminescence of Te-GaAs, it was deduced that pinning of the Fermi level by DX states is unlikely to occur.Keywords
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