Inversion Domain and Stacking Mismatch Boundaries in GaN
- 1 July 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 77 (1), 103-106
- https://doi.org/10.1103/physrevlett.77.103
Abstract
We present first-principles calculations of domain wall energies for inversion domain boundaries and stacking mismatch boundaries in GaN. We find a low-energy inversion domain boundary in which each atom remains fourfold coordinated without the formation of Ga-Ga or N-N bonds. This boundary, denoted IDB*, does not induce electronic states in the band gap and would therefore not adversely impact photoluminescence efficiency. The stacking mismatch boundary has a higher formation energy than IDB*, and gives rise to occupied N-derived interface states in the band gap.Keywords
This publication has 14 references indexed in Scilit:
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Formation of threading defects in GaN wurtzite films grown on nonisomorphic substratesApplied Physics Letters, 1995
- Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma-enhanced molecular beam epitaxyApplied Physics Letters, 1995
- Electron microscopy characterization of GaN films grown by molecular-beam epitaxy on sapphire and SiCJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- Initial stage of aluminum nitride film growth on 6H-silicon carbide by plasma-assisted, gas-source molecular beam epitaxyApplied Physics Letters, 1995
- Atomic geometry and electronic structure of native defects in GaNPhysical Review B, 1994
- Simultaneous calculation of the equilibrium atomic structure and its electronic ground state using density-functional theoryComputer Physics Communications, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam EpitaxyMRS Proceedings, 1989