Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs
- 11 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (15), 1201-1203
- https://doi.org/10.1063/1.99157
Abstract
We present a systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs multiple quantum wells (MQW’s) at room temperature and compare them with bulk GaAs. The maximum change in the refractive index is greatest for the MQW’s with the smallest well size and decreases with increasing well size, reaching a minimum for bulk GaAs. The maximum index change per photoexcited carrier increases by a factor of 3 as the well size decreases from bulk to 76 Å MQW.Keywords
This publication has 6 references indexed in Scilit:
- Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Room-Temperature Optical Nonlinearities in GaAsPhysical Review Letters, 1986
- Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structuresPhysical Review B, 1985
- Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structuresJournal of the Optical Society of America B, 1985
- Optical nonlinearity, bistability, and signal processing in semiconductorsJournal of the Optical Society of America B, 1985
- Electron theory of the optical properties of laser-excited semiconductorsProgress in Quantum Electronics, 1984