An electron-optical analog of a photon-optical projection camera is described. The system is designed to meet the requirements of future memory technology with submicrometer resolution over a chip size of several millimeters. A self-supporting foil mask is illuminated by electrons and magnetically imaged onto a wafer with a 10×reduction in size. This paper describes the electron optics required for a high-resolution large-field performance. Particular emphasis will be placed on the means for reducing the third-order aberrations of the magnetic projection lenses. The limitations imposed by the unavoidable aberrations of the condenser system are also discussed. The performance of the system is illustrated by reference to results obtained by exposing test patterns.