Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces

Abstract

InAs_xP_1−x/InP strained quantum well structures have been prepared by atmospheric‐pressure organometallic vapor phase epitaxy (OMVPE). Structures with compositions of x=0.40–0.67 and quantum well thicknesses of 0.8–16 nm were evaluated using photoluminescence spectroscopy. Strain in the pseudomorphic wells ranged from 1.3 to 2.1%. Doublets and multiplets are observed in the photoluminescence spectra and are attributed to luminescence from regions in the wells differing in thickness by a single monolayer, with atomically smooth interfaces over areas greater in lateral extent than the exciton diameter. Typical full widths at half maximum of the photoluminescence from the thinnest wells are 8–14 meV, comparable to the best reported values for thin lattice‐matched quantum wells prepared from the InGaAs(P)/InP system using OMVPE.