Defect-assisted tunneling current: A revised interpretation of scanning tunneling spectroscopy measurements
- 22 May 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (21), 3142-3144
- https://doi.org/10.1063/1.126550
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Theory of scanning tunneling microscopy of defects on semiconductor surfacesPhysical Review B, 2000
- Nano-scale properties of defects in compound semiconductor surfacesSurface Science Reports, 1999
- Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAsApplied Physics Letters, 1999
- Structure of the As Vacancies on GaAs(110) SurfacesPhysical Review Letters, 1996
- Signatures of Bulk and Surface Arsenic Antisite Defects in GaAs(110)Physical Review Letters, 1995
- Native point defects in low-temperature-grown GaAsApplied Physics Letters, 1995
- Geometry and electronic structure of the arsenic vacancy on GaAs(110)Physical Review Letters, 1994
- Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAsMaterials Science Forum, 1993
- Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAsPhysical Review Letters, 1993
- Detailed electrical characterisation of the deep Cr acceptor in GaAsJournal of Physics C: Solid State Physics, 1980