Influence of thickness and hydrogen concentration on optical and electrical properties of a-Si:H thin films

Abstract

The present work reports a study of the effects of thickness and hydrogen concentration on the optical and electrical properties of a-Si:H thin films deposited by glow discharge and by rf magnetron sputtering. UV-visible near-infrared transmittance and reflectance, film thickness, hydrogen content, dark conductivity, and photoconductivity were measured. Parameters such as dielectric constant, index of refraction, absorption coefficient, and optical band gap were obtained. The thickness and the hydrogen concentration are found to have an influence on some optical parameters; this behavior is explained in terms of homogeneity of the films.