Lattice mismatch accommodation atGeSi/{111}Si interfaces grown by liquid phase epitaxy
- 16 June 1992
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 131 (2), 651-662
- https://doi.org/10.1002/pssa.2211310235
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Accommodation of misfit during the initial growth of GaAs on {111}-SiPhilosophical Magazine A, 1991
- Liquid phase epitaxy in the ternary system Si-Ge-BiJournal of Crystal Growth, 1990
- Accommodation of lattice misfit in Si1−xGex/Si heterostructuresJournal of Crystal Growth, 1990
- The Accommodation of Lattice Mismatch on the (111) Interphase Boundary Plane in FCC MetalsMRS Proceedings, 1990
- Propagation of Dislocations Through GeSi/Si Strained Layers and SuperlatticesMRS Proceedings, 1988
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970
- Crystal Defects and Crystalline InterfacesPublished by Springer Nature ,1970
- Lattice Parameter and Density in Germanium-Silicon Alloys1The Journal of Physical Chemistry, 1964