Ion beam annealing of semiconductors
- 15 July 1980
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (2), 187-189
- https://doi.org/10.1063/1.91819
Abstract
The first use of an intense pulsed ion beam to anneal ion‐implanted semiconductors is reported. Helium ion channeling shows that a single 80‐ns pulse 200‐keV H+ ions at ∼100 A/cm2 produced good crystallinity in silicon implanted with 1014 As/cm2 at 100 keV.Keywords
This publication has 4 references indexed in Scilit:
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- Pulsed-electron-beam annealing of ion-implantation damageJournal of Applied Physics, 1979
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