Epitaxial (CdHg)Te Infrared Photovoltaic Detectors
- 15 November 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (10), 436-438
- https://doi.org/10.1063/1.1653761
Abstract
Fast sensitive photovoltaic detectors operating in the 77–130°K temperature range are prepared from (CdHg)Te epitaxial layers. Junction‐formation technique involves deviations from stoichiometry. The spectral response per quantum at 77°K is flat over a wide wavelength range (3–14 μm). Detectivity measurements in this wavelength range yield values at 77 °K between 3×109 and 3×1010 cm Hz1/2W−1. External quantum efficiency is around 13%. The time constant of these detectors is less than 1 nsec.Keywords
This publication has 4 references indexed in Scilit:
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