Surface flashover effects in AlGaN/GaN HFETs
- 1 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (9), 927-928
- https://doi.org/10.1049/el:19980648
Abstract
Experimental evidence of surface flashover in AlGaN/GaN heterojunction field effect transistors is presented. A practical and unambiguous way of identifying device failure by flashover is proposed. Surface flashover is the main mechanism initiating premature breakdown in these devices leading to a significant reduction of their power capability.Keywords
This publication has 3 references indexed in Scilit:
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- The influence of the semiconductor and dielectric properties on surface flashover in silicon-dielectric systemsIEEE Transactions on Electron Devices, 1994
- Prebreakdown and breakdown phenomena in high-field semiconductor-dielectric systemsJournal of Applied Physics, 1993