Lattice strain in ion-bombarded Si studied by X-ray Moiré technique
- 10 April 1972
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 39 (1), 63-64
- https://doi.org/10.1016/0375-9601(72)90329-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A study of the strain field of grown-in dislocations in a silicon X-ray interferometerJournal of Applied Crystallography, 1971
- SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGEApplied Physics Letters, 1971
- LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GaAs AND SIApplied Physics Letters, 1970
- X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion ImplantationPhysica Status Solidi (b), 1969
- Moiré patterns of atomic planes obtained by X-ray interferometryThe European Physical Journal A, 1966
- AN X-RAY INTERFEROMETERApplied Physics Letters, 1965