Room-temperature optically pumped laser oscillation at 2.07 μm from Ga0.85In0.15As0.13Sb0.87/ Al0.4Ga0.6As0.035Sb0.965 double heterostructures grown by molecular-beam epitaxy on GaSb substrates
- 15 December 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (12), 4087-4089
- https://doi.org/10.1063/1.337487
Abstract
The growth by molecular‐beam epitaxy of high‐quality Ga0.85In0.15As0.13Sb0.87 active layers with Al0.4Ga0.6As0.035Sb0.965 cladding layers on GaSb substrates by molecular‐beam epitaxy is reported. The lattice match of the active layer to the substrate is Δa/a ∼4 ×10−3. Optically pumped laser oscillation was observed from 80 to 300 K with T0=55 K for TT0=32 K for 225<T<300 K.Keywords
This publication has 18 references indexed in Scilit:
- Ultralow-Loss GlassesAnnual Review of Materials Science, 1986
- Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperatureSoviet Journal of Quantum Electronics, 1985
- Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μmElectronics Letters, 1985
- The Search for Very Low Loss Fiber-Optic MaterialsScience, 1984
- Miscibility gaps in quaternary III/V alloysJournal of Crystal Growth, 1982
- Unstable Region in Quaternary In1-xGaxAs1-ySby Calculated Using Strictly Regular Solution ApproximationJapanese Journal of Applied Physics, 1982
- Pseudoquaternary Phase Diagram Calculation of In1-xGaxAs1-ySby Quaternary SystemJapanese Journal of Applied Physics, 1982
- 2.0 μm c.w. operation of GaInAsSb/GaSb d.h. lasers at 80 KElectronics Letters, 1980
- Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 µm WavelengthJapanese Journal of Applied Physics, 1980
- The pseudoquaternary phase diagram of the Ga-In-As-Sb systemJournal of Crystal Growth, 1977