Electron correlation effects on Anderson localized states
- 31 October 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 28 (1), 127-131
- https://doi.org/10.1016/0038-1098(78)90342-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Specific heat study of heavily P doped SiSolid State Communications, 1977
- The Electronic Structure of a D- Centre in Many-Valley SemiconductorsJournal of the Physics Society Japan, 1977
- Numerical Study of Electron Localization in Anderson Model for Disordered Systems: Spatial Extension of WavefunctionJournal of the Physics Society Japan, 1977
- Transport in Disordered MaterialsPhysical Review Letters, 1973
- Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped-Type Silicon. II. A Unified TreatmentPhysical Review B, 1973
- Electron-Spin-Resonance Studies of Heavily Phosphorus-Doped SiliconPhysical Review B, 1971
- Determination of the Donor Pair Exchange Energy in Phosphorus-Doped SiliconPhysical Review B, 1970
- Piezoresistance and Magnetic Susceptibility in Heavily Dopedn-Type SiliconJournal of the Physics Society Japan, 1968
- Absence of Diffusion in Certain Random LatticesPhysical Review B, 1958