Fast pulse behaviour of InGaAsP/InP double-heterostructure lasers emitting at 1.27 μm

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Abstract
The fast pulse behaviour of InGaAsP/InP d.h. lasers prepared on (100) InP substrates by liquid phase epitaxy has been studied. The possibility of high-speed direct modulation at a few gigahertz has been deduced from the relaxation oscillation characteristics.