Nonuniform and latchup current detection in lateral conductivity modulated FETs
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (6), 250-252
- https://doi.org/10.1109/55.55270
Abstract
Three-dimensional effects on current distribution in lateral conductivity modulated power transistors such as the lateral insulated-gate bipolar transistor (LIGBT) are studied using the infrared microscopy technique. Nonuniform current distribution and the location of the latchup sites in these devices have been identified. This provides experimental insights into the design and optimization of these high-voltage power transistors. For optimized p/sup +/ anode LIGBT devices with a breakdown voltage of 600 V, a current density of 200 A/cm/sup 2/ at a forward voltage of 2 V, which is comparable to the DMOS IGBT, and a latchup current density above 800 A/cm/sup 2/ have been obtained.Keywords
This publication has 6 references indexed in Scilit:
- Infrared microscopy study of anomalous latchup characteristics due to current redistribution in different parasitic pathsIEEE Transactions on Electron Devices, 1989
- LDMOS and LIGT's in CMOS technology for power integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Analysis and characterization of the hybrid Schottky injection field effect transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Lateral insulated gate transistors with improved latching characteristicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Comparison of high voltage devices for power integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Lateral resurfed COMFETElectronics Letters, 1984