Proposal for strained type II superlattice infrared detectors
- 15 September 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (6), 2545-2548
- https://doi.org/10.1063/1.339468
Abstract
We show that strained type II superlattices made of InAs‐Ga1−x In x Sb x∼0.4 have favorable optical properties for infrared detection. By adjusting the layer thicknesses and the alloy composition, a wide range of wavelengths can be reached. Optical absorption calculations for a case where λ c ∼10 μm show that near threshold the absorption is as good as for the HgCdTe alloy with the same band gap. The electron effective mass is nearly isotropic and equal to 0.04 m. This effective mass should give favorable electrical properties, such as small diodetunneling currents and good mobilities and diffusion lengths.Keywords
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