Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islands

Abstract

A Si single-electron transistor (SET) with satellite Si islands has been fabricated by pattern-dependent oxidation of cross-shaped Si wires on a separation by implanted oxygen (SIMOX) substrate. The oscillatory conductance-versus-gate voltage characteristics of the SET show hysteresis as a result of abrupt jumps in the conductance at high temperatures around 30 K. This phenomenon is attributed to the memory effect of a single electron that tunnels between the SET Si island and the satellite Si islands. Time-resolved measurements have clarified that the conductance jump is a Poisson process, which is clear evidence of the single-electron tunneling between the Si islands.