Direct comparison of two-dimensional dopant profiles by scanning capacitance microscopy with TSUPREM4 process simulation
- 1 January 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (1), 344-348
- https://doi.org/10.1116/1.589808
Abstract
No abstract availableKeywords
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