Intrinsic band-edge photoluminescence from silicon clusters at room temperature
- 15 September 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (12), R8361-R8364
- https://doi.org/10.1103/physrevb.54.r8361
Abstract
We report silicon band-edge photoluminescence (PL) with photon energy of 1.1 eV and external quantum efficiency (EQE) better than in samples prepared by high-temperature oxidation of porous silicon. The integrated PL intensity is insensitive to temperature. The EQE strongly depends on the annealing conditions: temperature, time, and ambient. A model is proposed in which the PL originates from silicon clusters within a nonstoichiometric silicon-rich silicon oxide matrix.
Keywords
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