Thermal regrowth of ion-damaged YBa2Cu3O7−δ superconducting thin films
- 1 March 1992
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 7 (3), 531-534
- https://doi.org/10.1557/jmr.1992.0531
Abstract
Regrowth of ion-damaged YBa2Cu3O7−δ thin films on LaAlO3 was studied using the ion beam channeling technique. The damaged films can be regrown at a temperature as low as 650 °C, and are stable up to 1000 °C. The regrowth process was found to be thermally activated with a single activation energy of 0.46 eV, contrary to two energies found in a previous study on the films on MgO [J. A. Martinez et al., Appl. Phys. Lett. 57, 189 (1990)].Keywords
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