Silver nanowires grown in the pores of a silica gel
- 1 December 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (23), 3770-3772
- https://doi.org/10.1063/1.1327278
Abstract
Silver nanowires of diameter ∼40 nm and length ∼0.3 mm have been grown by electrodeposition within the pores of silica gels which were heat treated in the temperature range 523 to 823 K and, subsequently, soaked in a silver nitrate solution. A staircase current–voltage characteristic was observed in the direction of electrodeposition after nanowires were disrupted by the application of a dc voltage pulse. Such gels containing interrupted nanowires of silver showed a dielectric constant value both in directions parallel and perpendicular to that of electrodeposition.
Keywords
This publication has 17 references indexed in Scilit:
- SQUID studies of Co–Cu heterogeneous alloy nanowiresJournal of Magnetism and Magnetic Materials, 2000
- Semiconductor nanowires from oxidesJournal of Materials Research, 1999
- Densification kinetics and structural evolution during sintering of silica aerogelJournal of Non-Crystalline Solids, 1998
- Spontaneous charge polarization in single-electron tunneling through coupled nanowiresPhysical Review B, 1997
- Semiconductor Clusters, Nanocrystals, and Quantum DotsScience, 1996
- The Chemistry of Size and Order on a Nanometer ScaleScience, 1995
- One-dimensional plasmons in AlGaAs/GaAs quantum wiresPhysical Review Letters, 1991
- Anisotropic plasmon dispersion in a lateral quantum-wire superlatticePhysical Review Letters, 1990
- Coupling of quantum dots on GaAsPhysical Review Letters, 1990
- Nonlocal dynamic response and level crossings in quantum-dot structuresPhysical Review Letters, 1990